Typically, accurate scale model measurements are difficult, time-consuming and prone to uncertainties for the following reasons: (1) the wide range of sizes (> 1000:1) in an SIS mount are difficult or impossible to achieve in a model (2) The iterative process of modifying the scale model to study the effect of changes involves re-machining and/or re-layout of probe circuits and (3) the problem of providing small coaxial probes to the location of the SIS junction involves uncertainties in the scale model measurements due to calibration errors and the fact that the probe itself is disturbing the field at the measurement point.
We have performed numerical electromagnetic simulations of the waveguide mount. The advantages of numerical analysis are that one may study the effects of the dielectric, optimize the SIS tuning circuit using the embedding impedance, and modify the structure easily. Other advantages include the ability to study the small size scales of the junction mount with the antenna probe, and the ability to reduce the complexity of the problem by exploiting symmetry considerations. The finite element analysis was done using Ansoft's HFSS [4]. The accuracy of HFSS in predicting embedding impedances has already been demonstrated in the design of multipliers [16].
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We tried several different approaches in the numerical analysis. Initially, voltage sources were used at the location of the gap between the two antenna probes in the center of the waveguide. The field-calculator in the post-processor of HFSS was then used to determine impedance by calculating the Poynting power flow through the gap and using the ZPV definition to determine the impedance. This technique gave reasonable results in measuring the embedding impedance, but was slow and laborious. It also suffers from the fact that these impedances are time-dependent, and hence care must be taken to set the phase of the excitation right. The next method was to ``subtract'' the RF choke and antenna structure from the waveguide structure. Subtraction in HFSS is an ``exclusive-or'' operation, and results in a new structure that contains one of the two objects but not both. This has the effect of bringing the buried gap in the center of the waveguide to the outside world, thereby allowing us to define a port and excite the gap with a TEM-type transmission line. In Figure 6, we show the comparison of the scale model from the previous section to an HFSS model configured using this technique. The backshort distance in the HFSS model was set to 0.2 mm, and is the same as the scale model. It can be seen that although their location is in the same general vicinity in the Smith Chart, the agreement between the scale models and finite element analysis is not very good. We modeled the antenna structure as a perfect conductor, and this could account for some of the discrepancy. However, since the HFSS model is performed at the frequency of operation, much of the discrepancy is attributed to uncertainties in the scaling and calibration of the scaled model measurements.
A third approach to the numerical analysis is to reproduce as
faithfully as possible, the actual layout of the junction with
relation to the antenna probe. Figure 7 shows the view of the HFSS
model used. The model is a 4-port network with port 1 being the SIS
junction, port 2 the IF port and ports 3 and 4 the input and the
output waveguide ports respectively. The output port is deembedded at
a later stage and a backshort attached to it using analysis outside
HFSS. The zoomed-in view of the antenna-probe to junction transition
shows the junction defined as a square area. The insulator gap of the
junction for this problem is a virtual object to help with creating an
adequate mesh for the problem. The actual port for the TEM
transmission line is capped off at the end with a perfect
conductor. The capped feed ensures that the field propagates only into
the junction area, which is the area of interest. Once the problem is
analyzed in HFSS, the four-port S-parameter is exported (after
renormalization to
and deembedding) to a linear circuit
simulator (MDS) and optimized there. Figure 8 shows the MDS equivalent
circuit model. The backshort is modeled with a shorted half-height
rectangular waveguide transmission line in the circuit
simulator. For the purpose of this analysis, the tuned SIS junction
was replaced with an equivalent impedance of
.
The
circuit was then optimized for the best backshort distance, resulting
in the best case input RF match shown in Figure 9. In practice, the
SIS junction and tuning circuit as well as the backshort can be
optimized together with the embedding impedance S-parameter set
derived from HFSS for the best optimization. It can be seen from
Figure 9 that the input match is much better than that shown in Figure
5 using the scale-model measurements, and that one backshort setting
covers the entire band of interest. Another advantage of this analysis
is that the coupling of RF to the IF port and the effectiveness of the
RF choke is easily calculated, and any transverse resonance modes in
the substrate channel can be studied carefully.